74V2G66STR(2000) Просмотр технического описания (PDF) - STMicroelectronics

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74V2G66STR
(Rev.:2000)

DUAL BILATERAL SWITCH

STMicroelectronics 

74V2G66

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf =3 ns)

Symb ol

Parameter

tPD Delay Time

tPZL Output Enable Time

tPZH

tPLZ Output Disable Time

tPHZ

Test Condition

V CC

( V)

3.3(*)

5.0(**)

3.3(*)

5.0(**)

3.3(*)

5.0(**)

tr = tf =6ns

RL = 1kΩ

RL = 500Ω

Value

TA = 25 oC

Min. Typ. Max.

0.4 0.8

0.3 0.6

2.5 4.0

2.0 4.0

5.0 7.5

5.0 7.5

-40 to 85 oC

Min . Max.

1.2

1.0

5.0

5.0

9.0

9.0

Unit

ns

ns

ns

CIN Input Capacitance

CI/O Switch Terminal

Capacitance

5

pF

10

pF

CPD Power Dissipation

3.3

Capacitance (note 1)

5.0

2.5

pF

3

1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto

Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/2 (switch).

(*) Voltage range is 3.3V ± 0.3V

(**) Voltagerange is 5V ± 0.5V

ANALOG SWITCH CHARACTERISTICS (GND = 0 V, TA = 25oC)

Symb ol

Parameter

Sine Wave Distortion

(THD)

fMAX Frequency Response

(Switch ON)

Feedthrough

Att enuati on

(Switch OFF)

Crosstalk (Control

Input to Signal Output)

Crosstalk (Between

Switches)

(*) Voltage range is 5V ± 0.5V

V CC

(V)

3.3

5.0(*)

3.3

5.0(*)

3.3

5.0(*)

3.3

5.0(*)

3.3

5.0(*)

Test Co nditi on

Value

VIN

(Vp-p)

2.75

4

fIN = 1 KHz RL = 10KΩ CL = 50 pF

0.04

0.04

Adjust fIN voltage to Obt ain 0dBm at VOS.

150

Increase fIN Frequency until dB Meter reads -3dB 180

RL = 50Ω, CL = 10pF

VIN is centered at VCC/2.

-60

Adjust fIN voltage to obtain 0dBm at VIS

-60

RL = 600Ω, CL = 50pF, fIN = 1MHz sine wave

RL = 600Ω, CL = 50pF, fIN = 1MHz square wave

60

tr = tf = 6ns

60

RL = 600Ω, CL = 50pF, fIN = 1MHz sine wave

-60

-60

Un it

%

MHz

dB

mV

dB

4/8

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