IPD122N10N3G(2009) Просмотр технического описания (PDF) - Infineon Technologies
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IPD122N10N3G Datasheet PDF : 9 Pages
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IPD122N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=50 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=50 V, V GS=10 V,
-
t d(off)
I D=46 A, R G=1.6 Ω
-
tf
-
1880
330
14
14
8
24
5
2500 pF
439
-
- ns
-
-
-
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
9
- nC
Q gd
-
5
-
Q sw
V DD=50 V, I D=46 A,
V GS=0 to 10 V
-
9
-
Qg
-
26
35
V plateau
-
4.9
-V
Q oss
V DD=50 V, V GS=0 V
-
35
46 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=46 A,
T j=25 °C
t rr
V R=15 V, I F=46 A ,
Q rr
di F/dt =100 A/µs
-
-
59 A
-
-
236
-
1
1.2 V
-
61
- ns
-
103
- nC
6) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-07-09
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