MG12150D-BA1MM Просмотр технического описания (PDF) - Littelfuse, Inc
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MG12150D-BA1MM Datasheet PDF : 6 Pages
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Power Module
1200V 150A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
IGBT
VGE(th)
VCE(sat)
Parameters
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
Qge
Gate Charge
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Diode
VF
trr
IRRM
Qrr
Turn - off Energy
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
Test Conditions
VCE=VGE, IC=6mA
IC=150A, VGE=15V, TJ=25°C
IC=150A, VGE=15V, TJ=125°C
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V,VGE=±20V
VCC=600V, IC=150A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V
IC=150A
RG =7.5Ω
VGE=±15V
Inductive Load
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
IF=150A , VGE=0V, TJ =25°C
IF=150A , VGE=0V, TJ =125°C
IF=150A , VR=800V
diF/dt=-1000A/μs
TJ =125°C
Min
Typ
Max
5.0
6.2
7.0
1.8
2.0
0.4
1.0
4.0
-200
200
1550
11
0.8
0.52
150
160
65
65
440
500
55
70
14.9
20.6
9.8
15.6
2.0
2.48
1.7
2.20
240
85
10.5
Unit
V
V
V
mA
mA
nA
nC
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
V
V
ns
A
μC
MG12150D-BA1MM
920
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
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