SFSD0512N1BN1TO-I-ME-161-STD Просмотр технического описания (PDF) - Unspecified
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SFSD0512N1BN1TO-I-ME-161-STD Datasheet PDF : 3 Pages
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S-200u Series
MICRO SD Memory Card
1 Feature summary
Highly-integrated memory controller
o Fully compliant with SD Memory Card specification 2.0 and
Micro SD Memory Card specification 2.0 addendum
o Four integrated 4KByte Sector buffers for fast data transfer
Standard MICRO SD Memory Card form factor
o 15.0mm x 11.0mm x 0.7mm
2.7…3.6V normal operating voltage
Low-power CMOS technology
Wear Leveling: equal wear leveling of static and dynamic data.
The wear leveling assures that dynamic data as well as static data is balanced evenly across the
memory. With that the maximum write endurance of the device is guaranteed.
Patented power-off reliability
o No data loss of older sectors
o Max. 16 sectors data loss (old data kept) if power off during writing
High reliability
o Best available SLC NAND Flash technology
o Designed for embedded market
o MTBF:
> 3,000,000 hours
o Number of insertions: >10,000
o Extended Temperature range: -25° up to 85°C
o Industrial Temperature range: -40° up to 85°C
Hot swappable
High performance
o SD burst up to 25MB/s
o SD Low speed 0…25MHz clock rate
o SD High speed 25…50MHz clock rate
o Up to 21/18 MB/s sustained read/write speed
o Flash burst up to 40MB/s
o “Default speed cards” with disabled high speed mode available
Available densities
o 512MB up to 2GBytes
Controlled BOM
Life Time Monitoring SD/SPI with standard or vendor commands
Swissbit AG
Industriestrasse 4
CH-9552 Bronschhofen
Switzerland
www.swissbit.com
industrial@swissbit.com
Revision: 1.01
S-200u_fact sheet_SD-NxBN_Rev101
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