ZXTD6717E6 Просмотр технического описания (PDF) - Diodes Incorporated.
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ZXTD6717E6 Datasheet PDF : 8 Pages
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A Product Line of
Diodes Incorporated
ZXTD6717E6
PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 11)
DC Current Gain
Symbol Min
BVCBO
-12
BVCEO
-12
BVEBO
-7
ICBO
IEBO
ICES
300
300
hFE
200
125
75
30
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VBE(sat)
VBE(on)
Cobo
Current Gain Bandwidth Product
fT
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
ton
toff
Note: 11. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
Typ
<-1
<-1
<-1
490
450
340
250
140
80
-25
-55
-110
-160
-185
-0.99
-0.85
15
220
50
135
Max
-10
-10
-10
-40
-100
-175
-215
-240
-1.10
-1.0
Unit
Test Condition
V IC = -100µA, IE = 0
V IC = -10mA, IB = 0
V IE = -100µA, IC = 0
nA VCB = -10V
nA VEB = -5.6V
nA VCE = -10V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1.25A, VCE = -2V
IC = -2A, VCE = -2V
IC = -3A, VCE = -2V
mV IC = -100mA, IB = -10mA
mV IC = -250mA, IB = -10mA
mV IC = -500mA, IB = -10mA
mV IC = -1A, IB = -50mA
mV IC = -1.25A, IB = -100mA
V IC = -1.25A, IB = -100mA
V IC = -1.25A, VCE = -2V
pF
MHz
VCB = -10V, f = 1.0MHz
IC = -50mA, VCE = -10V
f = 100MHz
ns IC = -1A, VCC = -10V
ns IB1 = -IB2 = -100mA
ZXTD6717E6
Document Number: DS33653 Rev: 4 - 2
5 of 8
www.diodes.com
March 2015
© Diodes Incorporated
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