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ZXTD6717E6TC

COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS

Zetex => Diodes 

ZXTD6717E6

PNP TRANSISTOR

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO -12

V

IC=-100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO -12

V

IC=-10mA*

Emitter-Base Breakdown Voltage V(BR)EBO -5

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector Emitter Cut-Off Current ICES

Collector-Emitter Saturation

Voltage

VCE(sat)

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

300

Ratio

300

200

125

75

30

Transition Frequency

fT

-25

-55

-110

-160

-185

-0.99

-0.85

490

450

340

250

140

80

220

-10

-10

-10

-40

-100

-175

-215

-240

-1.10

-1.0

V

nA

nA

nA

mV

mV

mV

mV

mV

V

V

MHz

IE=-100␮A

VCB=-10V

VEB=-4V

VCES=-10V

IC=-100mA, IB=-10mA*

IC=-250mA, IB=-10mA*

IC=-500mA, IB=-10mA*

IC=-1A, IB=-50mA*

IC=-1.25A, IB=-100mA*

IC=-1.25A, IB=-100mA*

IC=-1.25A, VCE=-2V*

IC=-10mA, VCE=-2V*

IC=-100mA, VCE=-2V*

IC=-500mA, VCE=-2V*

IC=-1.25A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-3A, VCE=-2V*

IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

15

Turn-On Time

Turn-Off Time

t(on)

t(off)

50

135

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

pF

VCB=-10V, f=1MHz

ns

IC=-1A, VCC=-10V

ns

IB1=IB2=-100mA

ISSUE 2 - JULY 2001

4

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