YG912S6R Просмотр технического описания (PDF) - Fuji Electric
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YG912S6R Datasheet PDF : 14 Pages
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Collector current vs. Collector-Emitter voltage (typ.)
Tj=25℃,sense terminal
2800
2400
VGE=20V 15V 12V
2000
1600
1200
10V
800
400
0
0.0
8V
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,sense terminal
2800
2400
Tj=25°C Tj=125°C
2000
1600
1200
800
400
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-Emitter voltage : VCE [V]
Tentative
(Under developmemt)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, sense terminal
2800
2400
VGE=20V 15V
12V
2000
1600
10V
1200
800
400
0
0.0
8V
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25℃,sense terminal
10
8
6
4
Ic=2400A
2
Ic=1200A
Ic=600A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
1000
Dynamic Gate charge (typ.)
Tj= 25°C
25
Cies
800
20
100
VCE
VGE
600
15
Cres
400
10
10
Coes
200
5
1
0
10
20
Collector-Emitter voltage : VCE [V]
0
0
30
0 1000 2000 3000 4000 5000 6000
Gate charge : Qg [ nC ]
MT5F16507
9 14
H04-004-003
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