DTD143TKT146 Просмотр технического описания (PDF) - ROHM Semiconductor

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DTD143TKT146

500mA / 40V Digital transistors (with built-in resistor)

ROHM Semiconductor 

Transistors

DTD143TK

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO 50

Collector-emitter breakdown voltage BVCEO 40

Emitter-base breakdown voltage

BVEBO 5

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE 100

Input resistance

R1 3.29

Transition frequency

∗ Characteristics of built-in transistor

fT ∗ −

Typ.

−

−

−

−

−

−

250

4.7

200

Max.

−

−

−

0.5

0.5

0.3

600

6.11

−

Unit

Conditions

V IC=50µA

V IC=1mA

V IE=50µA

µA VCB=50V

µA VEB=4V

V IC/IB=50mA/2.5mA

− VCE=5V, IC=50mA

kΩ

−

MHz VCE=10V, IE= −50mA, f=100MHz

zElectrical characteristic curves

1k

VCE=5V

500

200

100

Ta=100 C

25 C

50

−40 C

20

10

5

2

1

500 1m 2m 5m 10m 20m 50m100m 200m 500m

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain vs. collector current

1

500m

lC/lB=20

200m

100m

50m

Ta=100 C

25 C

−40 C

20m

10m

5m

2m

1m

500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage

vs. collector current

Rev.B

2/2

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