Transistors
DTD143TK
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 50
−
−
V IC=50µA
Collector-emitter breakdown voltage BVCEO 40 −
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO 5
−
−
V IE=50µA
Collector cutoff current
ICBO
−
− 0.5 µA VCB=50V
Emitter cutoff current
IEBO
−
− 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE(sat) −
− 0.3 V IC/IB=50mA/2.5mA
DC current transfer ratio
hFE 100 250 600 − VCE=5V, IC=50mA
Input resistance
R1 3.29 4.7 6.11 kΩ
−
Transition frequency
∗Transition frequency of the device
fT
− 200 − MHz VCE=10V, IE= −50mA, f=100MHz ∗
zPackaging specifications
Package
Packaging type
Code
Part No.
Basic ordering
unit (pieces)
DTD143TK
SMT3
Taping
T146
3000
zElectrical characteristic curves
1k
VCE=5V
500
200
100
Ta=100 C
25 C
50
−40 C
20
10
5
2
1
500 1m 2m 5m 10m 20m 50m100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
1
500m
lC/lB=20
200m
100m
50m
Ta=100 C
25 C
−40 C
20m
10m
5m
2m
1m
500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs. collector current
Rev.A
2/2