WH1222 Просмотр технического описания (PDF) - SEOUL SEMICONDUCTOR

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WH1222

CHIP LED DEVICE

SEOUL SEMICONDUCTOR 

1. Features

Package : 3.5×3.5×0.95mm

Color coordinates: according to CIE 1931

Tape and reel packing

#

#

#

2. Absolute Maximum Ratings

Parameter

Symbol

Power Dissipation

PD (per die)

Forward Current

Peak Forward Current

IF (per die)

IFM*1 (per die)

Reverse Voltage

VR (per die)

Operating Temperature

Topr

Storage Temperature

Tstg

*1 IFM conditions: Pulse width Tw≤ 0.1ms, Duty ratio≤ 1/10

Value

120

30

100

5

-30 ~ 80

-40 ~100

(Ta=25℃)

Unit

㎽

㎃

㎃

V

℃

℃

#

3. Electro-Optical Characteristics

(Ta=25℃)

Parameter

Symbol Condition

Min

Typ

Max

Unit

Forward Voltage

VF

Reverse Current

IR

Luminous Intensity*2

(3 elements)

IV

Chromaticity Coordinates

X

(3 elements)

Y

IF=20㎃

( per die)

VR=5V

IF=20㎃

(per die)

IF=20㎃

( per die)

3.0

-

1300

0.245

0.27

3.2

-

1700

0.30

0.30

3.7

V

10

㎂

-

mcd

0.34

㎚

0.34

㎚

Viewing angle*3

2θ 1/2

IF=20㎃

(per die)

-

130

-

˚

*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.

[Note] Tolerance: VF ±0.1V, IV –5,+10%, color coordinate 䦴0.01

SSC-QP-0401-06(REV.0)

SEOUL SEMICONDUCTOR CO,. LTD.

148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea

TEL: 82-2-3281-6269 FAX: 82-2-858-5537

- 2/8-

SSC-WH1222

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