W49F102 Просмотр технического описания (PDF) - Winbond

Номер в каталоге

Компоненты Описание

Список матч

W49F102

64K X 16 CMOS FLASH MEMORY

Winbond 

W49F102

DC CHARACTERISTICS

Absolute Maximum Ratings

PARAMETER

Power Supply Voltage to VSS Potential

Operating Temperature

Storage Temperature

D.C. Voltage on Any Pin to Ground Potential except OE

Transient Voltage (<20 nS ) on Any Pin to Ground Potential

Voltage on OE Pin to Ground Potential

RATING

-0.5 to +7.0

0 to +70

-65 to +150

-0.5 to VDD +1.0

-1.0 to VDD +1.0

-0.5 to 12.5

UNIT

V

°C

°C

V

V

V

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability

of the device.

DC Operating Characteristics

(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)

PARAMETER SYM.

TEST CONDITIONS

Power Supply

Current

ICC CE = OE= VIL, WE = VIH,

all I/Os open

Address inputs = VIL/VIH, at f = 5 MHz

Standby VDD

Current (TTL input)

ISB1 CE = VIH, all I/Os open

Other inputs = VIL/VIH

Standby VDD Current ISB2 CE = VDD -0.3V, all I/Os open

(CMOS input)

Other inputs = VDD -0.3V/Vss

Input Leakage

Current

ILI VIN = Vss to VDD

Output Leakage

Current

ILO VOUT = Vss to VDD

Input Low Voltage

VIL

-

Input High Voltage VIH

-

Output Low Voltage VOL IOL = 2.1 mA

Output High Voltage VOH IOH = -0.4 mA

LIMITS

MIN. TYP. MAX.

- 25 50

-

2

3

- 20 100

-

-

-

-

-0.3 -

2.0 -

-

-

2.4 -

10

10

0.8

VDD

+0.5

0.45

-

UNIT

mA

mA

µA

µA

µA

V

V

V

V

- 11 -

Publication Release Date: October 2000

Revision A3

Share Link: