VUO80-12NO7 Просмотр технического описания (PDF) - IXYS CORPORATION
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VUO80-12NO7 Datasheet PDF : 2 Pages
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VUO 80
80
A
70
IF 60
50
40
30 TVJ=150°C
TVJ= 25°C
20
10
500
50Hz, 80% VRRM
A
IFSM400
TVJ = 45°C
300
200
TVJ = 150°C
100
0
0.0
0.5
1.0
1.5 V 2.0
0
0.001
0.01
0.1 s 1
VF
t
Fig. 1 Forward current versus voltage
Fig. 2 Surge overload current
drop per diode
200
W
150
Ptot
100
RthHA :
0.5 K/W
1.0 K/W
1.5K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
50
104
A2s VR = 0 V
I2t
TVJ = 45°C
103
TVJ = 150°C
102
1
2 3 4 5 6 7 8ms910
t
Fig. 3 I2t versus time per diode
100
A
80
Id(AV)M
60
40
20
0
0 10 20 30 40 50 60 70 80 A 0 20 40 60 80 100 120 140 °C
Id(AV)M
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature
1.6
K/W
1.4
ZthJH
1.2
0
0 20 40 60 80 100 120 140 °C
TH
Fig. 5 Max. forward current versus
heatsink temperature
1.0
0.8
0.6
0.4
0.2
0.0
0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to heatsink
Constants for ZthJH calculation:
i
1
2
3
VUO 80
4
1
s
10
t
R (K/W)
thi
0.005
0.21
0.795
0.41
t (s)
i
0.01
0.05
0.14
0.5
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