VSKT136(2008) Просмотр технического описания (PDF) - Vishay Semiconductors
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VSKT136
(Rev.:2008)
(Rev.:2008)
Vishay Semiconductors
VSKT136 Datasheet PDF : 12 Pages
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VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAKTM Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
on-state, non-repetitive
ITSM
surge current
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
I2√t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
VFM
IH
Maximum latching current
IL
TEST CONDITIONS
VSK.136 VSK.142 VSK.162 UNITS
180° conduction, half sine wave
135
140
160
A
85
85
85
°C
As AC switch
300
310
355
t = 10 ms No voltage
t = 8.3 ms reapplied
3200 4500 4870
3360 4712 5100
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
100 % VRRM
reapplied
Sine half wave,
initial TJ =
TJ maximum
2700
2800
51.5
47
36.5
33.3
3785
3963
102
92.5
71.6
65.4
4100
4300
119
108
84
76.7
kA2s
t = 0.1 to 10 ms, no voltage reapplied
515.5
1013
1190 kA2√s
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 0.86
0.83
0.8
V
(I > π x IT(AV)), TJ maximum
1.05
1
0.98
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 2.02
1.78
1.67
mΩ
(I > π x IT(AV)), TJ maximum
1.65
1.43
1.38
ITM = π x IT(AV), TJ = 25 °C, 180° conduction
1.57
1.55
1.54
V
ITM = π x IT(AV), TJ = 25 °C, 180° conduction
1.57
1.55
1.54
V
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C
200
Anode supply = 6 V resistive load = 1 Ω
Gate pulse: 10 V, 100 µs, TJ = 25 °C
mA
400
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
tgd
tgr
tq
TEST CONDITIONS
TJ = 25 °C
Gate current = 1 A, dlg/dt = 1 A/µs
Vd = 0.67 % VDRM
ITM = 300 A, - dl/dt = 15 A/µs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω
VALUES
1
2
50 to 200
UNITS
µs
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of
off-state voltage
SYMBOL
IRRM,
IDRM
VINS
dV/dt
TEST CONDITIONS
TJ = 125 °C
50 Hz, circuit to base,
all terminals shorted, t = 1 s
TJ = TJ maximum,
exponential to 67 % rated VDRM
VALUES
50
3500
1000
UNITS
mA
V
V/µs
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94513
Revision: 12-Aug-08
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