VG26S17400E Просмотр технического описания (PDF) - Vanguard International Semiconductor

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VG26S17400E

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor 

VIS

VG26(V)(S)17400E

4,194,304 x 4 - Bit

CMOS Dynamic RAM

Truth Table

FUNCTION

STANDBY

READ

WRITE : (EARLY

WRITE)

READ WRITE

RAS

H

L

L

L

CAS

H→X

L

L

L

PAGE -

1st Cycle

L

MODE READ

2st

L

Cycle

PAGE -

1st Cycle

L

MODE WRITE 2st

L

Cycle

PAGE - MODE 1st Cycle

L

READ - WRITE

2st

L

Cycle

HIDDEN

REFRESH

READ

WRITE

L→H→L

L→H→L

RAS - ONLY REFRESH

L

CBR REFRESH

H→L

Notes : 1. EARLY WRITE only.

H→L

H→L

H→L

H→L

H→L

H→L

L

L

H

L

ADDRESSES

ROW COL

WE OE

DQS

X

X

X

X High - Z

H

L ROW COL Data - Out

L

X ROW COL Data - In

H → L L → H ROW

H

L ROW

H

L

n/a

COL Data - Out, Data - In

COL Data - Out

COL Data - Out

L

X ROW COL Data - In

L

X

n/a COL Data - In

H → L L → H ROW

H → L L → H n/a

COL Data - Out, Data - In

COL Data - Out, Data - In

H

L ROW COL Data - Out

L

X ROW COL Data - In

X

X ROW n/a High - Z

H

X

X

X High - Z

Notes

1

Document : 1G5-0142

Rev.1

Page 4

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