BSP52T1G(2010) Просмотр технического описания (PDF) - ON Semiconductor

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BSP52T1G
(Rev.:2010)

NPN Small-Signal Darlington Transistor

ON Semiconductor 

BSP52T1G, BSP52T3G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

Emitter-Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector-Emitter Cutoff Current

(VCE = 80 Vdc, VBE = 0)

Emitter-Base Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

Collector-Emitter Saturation Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

Base-Emitter Saturation Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%

Symbol

Min

Max

Unit

V(BR)CBO

90

V(BR)EBO

5.0

ICES

−

IEBO

−

Vdc

−

Vdc

−

mAdc

10

mAdc

10

hFE

−

1000

−

2000

−

VCE(sat)

−

Vdc

1.3

VBE(sat)

Vdc

−

1.9

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