BA158G Просмотр технического описания (PDF) - Leshan Radio Company

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BA158G

FAST GPP DIODES

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

BA157G-BA159G

GPP

RATING & CHARACTERISTIC CURVES OF FAST GPP DIODE

FIG.1 – TEST CIRCUIT DIAGRAM AND

REVERSE RECOVERY TIME CHARACTERISTIC

50 Ω

NONINDUCTIVE

10 Ω

NONINDUCTIVE

(+)

25Vdc

(APPROX)

(-)

D.U.T.

1Ω

OSCILLOSCOPE

NON.

INDUCTIVE

(NOTE 1)

(-)

PULSE

G E N E R ATO R

(NOTE 2)

(+)

Trr

+0.5A

0

-0.25A

NOTES:1.Rise Time=7ns max.

Input Impedance=1megohm.22pF.

2.Rise Time=10ns max.

Source Impedance=50 ohms.

-1.0A

1cm SET TIME

BASE FOR 10 ns/cm

FIG. 2 – TYPICAL FORWARD

CURRENT DERATING CURVE

1.0

0.8

0.6

0.4

IPK/IAV=π

Resistive or

0.2

Inductive Load

0.375”(9.5mm)

Lead lengths

0

0

25

50

75

100 125 150 175

AMBIENT TEMPER ATURE, (ºC)

FIG.4 – TYPICAL JUNCTION CAPACITANCE

100

FIG.3 – TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

10

TJ =25ºC

Pulse Width=300µs

1

1% Duty Cycle

.1

.01

0

2

4

6

8

10

12 14 16

INSTANTANEOUS FORWARD VOLTAGE,(V)

FIG.5 – MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

20

15

10

TJ = 25 ºC

f =1MHz

Vsing =50MVp-p

1

1

5

10

50

100

REVERSE VOLTAGE,(V)

10

5

TJ =55ºC

8.3ms Single Halt Sine

Wave (JEDEC Method)

0

1

2

4 6 10

20

40 60 100

NUMBER OF CYCLES AT 60Hz

35A–2/2

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