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U630H16XS

HardStore 2K x 8 nvSRAM Die

Simtek Corporation 

Obsolete - Not Recommended for New Designs

U630H16XS

HardStore 2K x 8 nvSRAM Die

Features

Description

• High-performance CMOS non-

volatile static RAM 2048 x 8 bits

• 25, 35 and 45 ns Access Times

• 12, 20 and 25 ns Output Enable

Access Times

• Hardware STORE Initiation

(STORE Cycle Time < 10 ms)

• Automatic STORE Timing

• 106 STORE cycles to EEPROM

• 100 years data retention in

EEPROM

• Automatic RECALL on Power Up

• Hardware RECALL Initiation

(RECALL Cycle Time < 20 μs)

• Unlimited RECALL cycles from

EEPROM

• Unlimited SRAM Read and Write

• Single 5 V ± 10 % Operation

• Operating temperature ranges:

0 to 70 °C

-40 to 85 °C

• QS 90000 Quality Standard

• ESD protection > 2000 V

(MIL STD 883C M3015.7-HBM)

The U630H16 has two separate

modes of operation: SRAM mode

and non-volatile mode, determined

by the state of the NE pad.

In SRAM mode, the memory ope-

rates as an ordinary static RAM. In

non-volatile operation, data is

transferred in parallel from SRAM

to EEPROM or from EEPROM to

SRAM. In this mode SRAM

functions are disabled.

The U630H16 is a fast static RAM

(25, 35, 45 ns), with a non-volatile

electrically erasable PROM

(EEPROM) element incorporated

in each static memory cell. The

SRAM can be read and written an

unlimited number of times, while

independent non-volatile data resi-

des in EEPROM. Data transfers

from the SRAM to the EEPROM

(the STORE operation), or from the

EEPROM to the SRAM (the

RECALL operation) are initiated

through the state of the NE pad.

The U630H16 combines the high

performance and ease of use of a

fast SRAM with non-volatile data

integrity.

Once a STORE cycle is initiated,

further input or output are disabled

until the cycle is completed.

Internally, RECALL is a two step

procedure. First, the SRAM data is

cleared and second, the non-vola-

tile information is transferred into

the SRAM cells.

The RECALL operation in no way

alters the data in the EEPROM

cells. The non-volatile data can be

recalled an unlimited number of

times.

The chips are tested with a

restricted wafer probe program

at room temperature only. Unte-

sted parameters are marked with

a number sign (#).

Pad Configuration

Pad Description

A5 A6 A7 NE VCC VBND W HSB A8 A9

A4

W

A3

G

A2

A10

A1

E

A0 DQ0 DQ1 DQ2 VSS VCC DQ3 DQ4 DQ5 DQ6 DQ7

Signal Name

A0 - A10

DQ0 - DQ7

E

G

W

NE

VCC

VSS

VBND

Signal Description

Address Inputs

Data In/Out

Chip Enable

Output Enable

Write Enable

Nonvolatile Enable

Power Supply Voltage

Ground

HardStore type enable

March 31, 2006

STK Control #ML0039

1

Rev 1.0

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