BD678A Просмотр технического описания (PDF) - STMicroelectronics

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BD678A

Complementary power Darlington transistors

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

BD6xxx

(Tcase = 25°C; unless otherwise specified)

Table 3. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cut-off current

(IB = 0)

VCE = half rated VCEO

ICBO

Collector cut-off current

(IE = 0)

VCE = rated VCBO

VCE = rated VCBO

Tc = 100 °C

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

for BD677, BD677A,

BD678, BD678A

60

IC = 50 mA

VCEO(sus)(1)

Collector-emitter

sustaining voltage (IB = 0)

for BD679, BD679A,

BD680, BD680A

80

IC = 50 mA

for BD681, BD682

IC = 50 mA

100

VCE(sat)(1)

for BD677, BD678,

BD679, BD680, BD681,

BD682

Collector-emitter saturation IC = 1.5 A

IB = 30 mA

voltage

for BD677A, BD678A,

BD679A, BD680A

IC = 2 A

IB = 40 mA

VBE(1) Base-emitter voltage

for BD677, BD678,

BD679, BD680, BD681,

BD682

IC = 1.5 A ___ VCE = 3 V

for BD677A, BD678A,

BD679A, BD680A

IC = 2 A

VCE = 3 V

0.5 mA

0.2

mA

2

2 mA

V

2.5

V

2.8

2.5 V

4/12

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