CM1000HA-28H Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CM1000HA-28H Datasheet PDF : 4 Pages
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MITSUBISHI IGBT MODULES
CM1000HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M8 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
-40 to 150
-40 to 125
1400
±20
1000
2000*
1000
2000*
5800
8.83~10.8
Mounting Torque, M6 Mounting
–
1.96~2.94
Mounting Torque, M4 Terminal
–
0.98~1.47
Weight
–
1600
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 100mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1000A, VGE = 15V
IC = 1000A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG
VCC = 800V, IC = 1000A, VGE = 15V
Emitter-Collector Voltage
VEC
IE = 10000A, VGE = 0V
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
–
–
2.0
mA
–
–
0.5
µA
5.0
6.5
8.0
Volts
–
3.3
4.5
Volts
–
3.1
–
Volts
–
5355
–
nC
–
–
4.0
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VGE = 0V, VCE = 10V
VCC = 800V, IC = 1000A,
VGE1 = VGE2 = 15V, RG = 3.3Ω
IE = 1000A, diE/dt = –2000A/µs
IE = 1000A, diE/dt = –2000A/µs
Min.
Typ.
Max. Units
–
–
200
nF
–
–
70
nF
–
–
40
nF
–
–
800
ns
–
–
2000
ns
–
–
1200
ns
–
–
650
ns
–
–
300
ns
–
10.5
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)
Per IGBT
–
Rth(j-c)
Per FWDi
–
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ. Max. Units
–
0.022 °C/W
–
0.050 °C/W
–
0.018 °C/W
Sep.1998
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