IDT6198S25DB Просмотр технического описания (PDF) - Integrated Device Technology
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IDT6198S25DB Datasheet PDF : 8 Pages
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IDT6198S/L
CMOS STATIC RAM 64K (16K x 4-BIT)
TIMING WAVEFORM OF READ CYCLE NO. 2(1, 2, 4)
tRC
ADDRESS
DATAOUT
tAA
tOH
PREVIOUS DATA VALID
MILITARY AND COMMERCIAL TEMPERATURE RANGES
tOH
DATA VALID
2987 drw 08
TIMING WAVEFORM OF READ CYCLE NO. 3(1, 3, 4)
CS
DATAOUT
VCC SUPPLY ICC
CURRENT ISB
tACS
tCLZ (5)
tPU
NOTES:
1. WE is HIGH for Read cycle.
2. Device is continuously selected, CS is LOW.
3. Address valid prior to or coincident with CS transition LOW.
4. OE is LOW.
5. Transition is measured ±200mV from steady state voltage.
DATA VALID
tCHZ(5)
tPD
2987 drw 09
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges)
6198S15(1)
6198L15(1)
6198S20
6198L20
6198S25
6198L25
6198S35 6198S45/55(2) 6198S70/85(2)
6198L35 6198L45/55(2) 6198L70/85(2)
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
Write Cycle
tWC
Write Cycle Time
14 — 17 — 20 — 30 — 40/50 — 60/75 — ns
tCW
Chip Select to End-of-Write
14 — 17 — 20 — 25 — 35/50 — 60/75 — ns
tAW
Address Valid to End-of-Write
14 — 17 — 20 — 25 — 35/50 — 60/75 — ns
tAS
Address Set-up Time
0 — 0 — 0 — 0 — 0 — 0 — ns
tWP
Write Pulse Width
14 — 17 — 20 — 25 — 35/50 — 60/75 — ns
tWR
Write Recovery Time
tWHZ(3) Write Enable to Output in High-Z
0 — 0 —0
— 5 — 6—
— 0 — 0 — 0 — ns
7 — 10 — 15/25 — 30/40 ns
tDW
Data Valid to End-of-Write
10 — 10 — 13 — 15 — 20/25 — 30/35 — ns
tDH
Data Hold Time
0 — 0 —0
tOW(3) Output Active from End-of-Write
5 — 5 —5
NOTES:
1. 0° to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter is guaranteed by device characterization, but is not production tested.
— 0 — 0 — 0 — ns
— 5 — 5 — 5 — ns
2987 tbl 12
6.3
6
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