IDT6198S35LB Просмотр технического описания (PDF) - Integrated Device Technology

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IDT6198S35LB

CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control

Integrated Device Technology 

IDT6198S/L

CMOS STATIC RAM 64K (16K x 4-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

(L Version Only) VLC = 0.2V, VHC = VCC - 0.2V

Typ. (1)

VCC @

Max.

VCC @

Symbol

Parameter

Test Condition

Min.

2.0v

3.0V

2.0V

3.0V

VDR

VCC for Data Retention

—

2.0

—

—

—

—

ICCDR

Data Retention Current

MIL.

—

10

COM’L. —

10

tCDR(3)

Chip Deselect to Data

CS ≥ VHC

0

—

Retention Time

VIN ≥ VHC or ≤ VLC

tR(3)

Operation Recovery Time

tRC(2)

—

|ILI|(3)

Input Leakage Current

—

—

15

600

900

15

150

225

—

—

—

—

—

—

—

2

2

NOTES:

1. TA = +25°C.

2. tRC = Read Cycle Time.

3. This parameter is guaranteed by device characterization but is not production tested.

Unit

V

µA

ns

ns

µA

2987 tbl 09

LOW VCC DATA RETENTION WAVEFORM

DATA

RETENTION

MODE

VCC

4.5V

tCDR

VDR ≥2V

CS

VIH

VDR

4.5V

tR

VIH

2987 drw 04

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

AC Test Load

DATAOUT

255Ω

GND to 3.0V

5ns

1.5V

1.5V

See Figures 1 and 2

2987 tbl 10

5V

480Ω

30pF*

DATAOUT

255Ω

5V

480Ω

5pF*

2987 drw 05

2987 drw 06

Figure 1. AC Test Load

Figure 2. AC Test Load

(for tOLZ, tCLZ, tOHZ, tWHZ, tCHZ and tOW)

*Includes scope and jig capacitances

6.3

4

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