IDT6129 Просмотр технического описания (PDF) - Integrated Device Technology
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IDT6129 Datasheet PDF : 7 Pages
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IDT61298SA
CMOS STATIC RAM 256K (64K x 4-BIT)
DC ELECTRICAL CHARACTERISTICS
VCC = 5.0V ± 10%
Symbol
|ILI|
|ILO|
VOL
VOH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
VCC = Max.,
VIN = GND to VCC
VCC = Max., CS = VIH,
VOUT = GND to VCC
IOL = 8mA, VCC = Min.
IOL = 10mA, VCC = Min.
IOH = –4mA, VCC = Min.
COMMERCIAL TEMPERATURE RANGE
IDT61298SA
Min. Typ. Max. Unit
µA
—
—
5
µA
—
—
5
—
—
0.4
V
—
—
0.5
2.4 —
—
V
2971 tbl 09
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%)
Symbol
Parameter
Read Cycle
tRC
Read Cycle Time
61298SA12 61298SA15
Min. Max. Min. Max. Unit
12
— 15 — ns
tAA
Address Access Time
—
12 — 15 ns
tACS
tCLZ(1)
tCHZ(1)
Chip Select Access Time
Chip Select to Output in Low-Z
Chip Deselect to Output in High-Z
—
12 — 15 ns
4
—
4
— ns
—
6 — 7 ns
tOE
tOLZ(1)
tOHZ(1)
Output Enable to Output Valid
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
—
6 — 7 ns
0
—
0
— ns
—
6 — 6 ns
tOH
tPU(1)
tPD(1)
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
3
—
3
— ns
0
—
0
— ns
—
12 — 15 ns
Write Cycle
tWC
Write Cycle Time
12
— 15 — ns
tCW
Chip Select to End-of-Write
9
— 10 — ns
tAW
Address Valid to End-of-Write
9
— 10 — ns
tAS
Address Set-up Time
0
—
0
— ns
tWP
Write Pulse Width
9
— 10 — ns
tWR
Write Recovery Time
0
—
0
— ns
tDW
Data Valid to End-of-Write
6
—
7
— ns
tDH
tWHZ(1)
tOW(1)
Data Hold Time
Write Enable to Output in High-Z
Output Active from End-of-Write
0
—
0
— ns
—
6 — 6 ns
4
—
4
— ns
NOTES:
1. This parameter is guaranteed with AC test load (Figure 2) by device characterization, but is not production tested.
2971 tbl 10
7.1
4
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