PTF10134 Просмотр технического описания (PDF) - Ericsson
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PTF10134 Datasheet PDF : 7 Pages
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PTF 10134
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic (per side)
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA
Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 150 mA
Forward Transconductance
VDS = 10 V, ID = 2 A
Symbol
V(BR)DSS
IDSS
VGS(th)
gfs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
5.0
mA
—
5.0
Volts
4.0
—
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage (1)
Gate-Source Voltage (1)
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
(1) per side
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
±20
200
440
2.51
–40 to +150
0.39
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
120
11
Output Power (W) 100
10
Gain (dB)
9
8
80
VDD = 28 V
60
IDQ = 1.3 A Total
40
7
2100
2120
2140
Efficiency (%)
20
2160 2180 2200
Frequency (MHz)
Broadband Test Fixture Performance
11
60
Gain
50
9
VDD = 28 V
IDQ = 1.3 A Total
40
7
POUT = 25 W
- 305
Efficiency
-1250
5
Return Loss
-2150
3
2100
2120
2140
2160
Frequency (MHz)
-305
2180
2
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