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42744V33 Просмотр технического описания (PDF) - Infineon Technologies

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42744V33
Infineon
Infineon Technologies Infineon
42744V33 Datasheet PDF : 18 Pages
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TLE42744
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
Tj = -40 °C to 150 °C; all voltages with respect to ground, (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
Min.
Max.
Input I
4.1.1 Voltage
Output Q
VI
-42
45
V
4.1.2 Voltage
Temperature
VQ
-1
40
V
4.1.3 Junction temperature
4.1.4 Storage temperature
ESD Susceptibility
Tj
-40
150
°C –
Tstg
-50
150
°C –
4.1.5 ESD Absorption
VESD,HBM
-4
4
kV Human Body Model
(HBM)2)
4.1.6
VESD,CDM -1000
1000
V
Charge Device
Model (CDM)3) at all
pins
1) not subject to production test, specified by design
2) ESD susceptibility Human Body Model “HBM” according to AEC-Q100-002 - JESD22-A114
3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
6
Rev. 1.1, 2010-01-13

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