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LH5P864N-80

CMOS 512K (64K × 8) Pseudo-Static RAM

Sharp Electronics 

CMOS 512K (64K × 8) Pseudo-Static RAM

LH5P864

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

Applied voltage on any pin

Output short circuit current

Power dissipation

Operating temperature

VT

IO

PD

Topr

-1.0 to +7.0

50

600

0 to +70

Storage temperature

Tstg

-65 to +150

NOTE:

1. The maximum applicable voltage on any pin with respect to GND.

UNIT

V

mA

mW

°C

°C

NOTE

1

RECOMMENDED OPERATING CONDITIONS (TA = 0 to +70°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Supply voltage

VCC

4.5

Input voltage

VIH

2.4

VIL

-1.0

5.0

5.5

V

VCC + 0.3

V

0.8

V

CAPACITANCE (TA = 0 to +70°C, f = 1MHz, VCC = 5.0 V ±10%)

PARAMETER

CONDITIONS

SYMBOL

MIN.

MAX.

A0 - A14

CIN1

8

Input capacitance

R/W, OE/RFSH

CIN2

8

CE1, CE2

CIN3

8

TEST1

CIN4

10

Input/Output capacitance I/O0 - I/O7

COUT1

10

UNIT

pF

pF

pF

pF

pF

DC CHARACTERISTICS (TA = 0 to +70°C, VCC = 5.0 V ±10%)

PARAMETER

SYMBOL

CONDITIONS

MIN.

Operating current

Standby current

ICC1

tRC = tRC (MIN.)

TTL input

ICC2

CMOS input

TTL input

Self refresh average current

ICC3

CMOS input

Input leakage current

ILI

0 V ≤ VIN ≤ 6.5 V,

0 V except on test pins

-10

Output leakage current

ILO

0 V ≤ VOUT ≤ VCC + 0.3 V,

Outputs in High-Z state

-10

Output HIGH voltage

VOH

IOUT = -1.0 mA

2.4

Output LOW voltage

VOL

IOUT = 4.0 mA

NOTES:

1. Specified values are with outputs open.

2. ICC1 depends on the cycle time.

3. CE1 = CE2 = VIH, OE/RFSH = VIH

4. CE1 = CE2 = VIH, OE/RFSH = VIL

5. CE1 = CE2 = VCC – 0.2 V, OE/RFSH = VCC – 0.2 V

6. CE1 = CE2 = VCC – 0.2 V, OE/RFSH = 0.2 V

MAX.

80

4.0

0.5

4.0

0.5

10

10

0.4

UNIT

mA

mA

mA

mA

mA

µA

µA

V

V

NOTE

1, 2

1, 3, 5

1, 3, 6

1, 4, 5

1, 4, 6

3

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