M5M29F25611VP Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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M5M29F25611VP
MITSUBISHI ELECTRIC
M5M29F25611VP Datasheet PDF : 36 Pages
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MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Command Definition (note 1,2)
First
Serial read(1)
Command
Without CA
Bus
cycles
3
Operation
mode (note 3)
Write
Data
in
00H
With CA
3+2h(note6) Write
00H
Serial read(2)
3
Write
F0H
Read identifier codes
1
Write
90H
Data Recovery Read
1
Write
01H
Auto Erase
Single sector
4
Write
20H
Auto Program Program (1) Without CA (note 7)
4
Write
10H
With CA (note 7)
4+2h(note6) Write
10H
Program (2) (note 10)
4
Write 1FH
Program (3) (control bytes) (note 7)
4
Write 0FH
Program (4) Without CA (note 7)
4
Write
11H
With CA (note 7) 4+2h(note6) Write
11H
Reset
1
Write FFH
Clear status register
1
Write
50H
Data Recovery Write
4
Write 12H
Operation
mode
Write
Write
Write
Read
Read
Write
Write
Write
Write
Write
Write
Write
-
-
Write
Second cycle
Data
in
out
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
-
ID (note8,9)
- Recovery Data
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
SA(1) (note 4) -
-
-
-
-
SA(1) (note 4) -
Serial read(1)
Serial read(2)
Auto Erase
Auto Program
Command
Bus
cycles
Without CA
3
With CA
3+2h(note6)
3
Single sector
4
Program (1)
Without CA (note 7)
4
With CA (note 7) 4+2h(note6)
Program (2) (note 10)
4
Program (3) (control bytes) (note 7)
4
Program (4)
Without CA (note 7)
4
With CA (note 7) 4+2h(note6)
Data Recovery Write
4
Third cycle
Operation
mode
Data
in
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Write SA(2) (note4)
Fourth cycle
Operation
mode
Data
in
-
-
Write
CA(1) (note5)
-
-
Write
B0H (note11)
Write
Write
Write
Write
Write
Write
40H (note11,12)
CA(1) (note5)
40H (note11,12)
40H (note11,12)
CA(1) (note5)
40H (note11,12)
Write 40H (note11,12)
Serial read(1)
Auto Program
Command
With CA
Program (1)
Program (4)
With CA (note 7)
With CA (note 7)
Bus
cycles
3+2h(note6)
4+2h(note6)
4+2h(note6)
Fifth cycle
Operation
mode
Write
Data
in
CA(2) (note5)
Write CA(2) (note5)
Write CA(2) (note5)
Sixth cycle
Operation
mode
-
Data
in
-
Write 40H (note11,12)
Write 40H (note11,12)
Notes : 1. Commands, sector address and column address are latched at rising edge of pulses.
Program data is latched at rising edge of SC pulses.
2. The chip is in the read status register mode when
is set to VIHR first time after the power up.
3. Refer to the command read and write mode in mode selection table (P.4).
4. SA(1)=Sector address (SA0 - SA7), SA(2)=Sector address (SA8 - SA13).
5. CA(1)=Column address (CA0 - CA7), CA(2)=Column address (CA8 - CA11).(0≤CA11 - CA0≤83FH)
6. The variable h is the input number of times of set of CA(1) and CA(2).(1≤h≤2048+64)
Set of CA(1) and CA(2) can be input not only one time but free times.
7. By using program(1) and (3), data can additionally be programmed for each sector before erase.
8. ID=Identifier code; Manufacturer code (1CH), Device code (6CH).
9. The manufacturer identifier code is output when
is low and the device identifier code is output when
is high.
10. Before program (2) operations, data in the programmed sector must be erased.
11. No commands can be written during auto program and erase (when the R/ pin outputs a VOL).
12. The fourth cycle or sixth cycle of the auto program comes after the program data input is complete.
5
Rev.2.3.1 2001.2.2
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