K30A06N1 Просмотр технического описания (PDF) - Toshiba
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K30A06N1 Datasheet PDF : 9 Pages
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MOSFETs Silicon N-channel MOS (U-MOS-H)
TK30A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TK30A06N1
TO-220SIS
1: Gate
2: Drain
3: Source
1
2012-09-20
Rev.4.0
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