TK13A65D Просмотр технического описания (PDF) - Toshiba
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TK13A65D Datasheet PDF : 9 Pages
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TK13A65D
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
|Yfs|
VGS = ±30 V, VDS = 0 V
VDS = 650 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6.5 A
VDS = 10 V, ID = 6.5 A
Min Typ. Max Unit
±1
µA
10
650
V
2.0
4.0
0.4 0.47
Ω
1.9
7.5
S
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
tr
ton
tf
toff
VDS = 25 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1.
Min Typ. Max Unit
2600
pF
11
280
50
ns
100
25
150
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Qg
VDD ≈ 400 V, VGS = 10 V, ID = 13 A
Qgs
Qgd
Min Typ. Max Unit
45
nC
28
17
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 1)
(Note 1)
Symbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR1 = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V
-dIDR/dt = 100 A/µs
Min Typ. Max Unit
13
A
52
-1.7
V
1400
ns
16
µC
3
2013-12-25
Rev.2.0
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