TIC108E Просмотр технического описания (PDF) - Comset Semiconductors

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TIC108E

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

Comset Semiconductors 

SEMICONDUCTORS

TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,

TIC108N, TIC108S

THERMAL CHARACTERISTICS

Symbol

Ratings

tgt

Gate-controlled

Turn-on time

VAA = 30 V, RL = 6 Ω

RGK(eff) = 5 kΩ, Vin = 50 V

tq

Circuit-communicated

Turn-off time

VAA = 30 V, RL = 6 Ω

IRM ≈ 8 A

R∂JC

Junction to case thermal resistance

R∂JA

Junction to free air thermal resistance

Value

2.9

13.3

≤ 3.5

≤ 62.5

Unit

µs

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

IDRM

IRRM

IGT

VGT

IH

VTM

dv/dt

Repetitive peak off-state

current

Repetitive peak reverse

current

VD = Rated VDRM

RGK = 1 kΩ, TC = 110°C

VR = Rated VRRM, IG = 0

TC = 110°C

-

- 400 µA

-

-

1 mA

Gate trigger current

VAA = 6 V, RL = 100 Ω

tp(g) ≥ 20µs

0.2 - 200 µA

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

TC = -40°C

-

- 1.2

Gate trigger voltage

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

0.4 0.6 1

V

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

TC = 110°C

0.2 -

-

Holding current

Peak on-state voltage

VAA = 6 V, RGK = 1 kΩ

initiating IT = 20 mA

VAA = 6 V, RGK = 1 kΩ

initiating IT = 20 mA

TC = -40°C

ITM = 5A (see Note6)

-

- 10

mA

-

- 15

-

- 1.7 V

Critical rate of rise of off-state VD = Rated VD, RGK = 1 kΩ

voltage

TC = 110°C

-

80

- V/µs

02/10/2012

COMSET SEMICONDUCTORS

2|3

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