TGP2103 Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGP2103

8.5 - 11 GHz 6-bit Phase Shifter

TriQuint Semiconductor 

TGP2103

TABLE I

MAXIMUM RATINGS

Symbol

Parameter

VC Control Voltage Range

IC Control Supply Current

PIN Input Continuous Wave Power

PD Power Dissipation

TCH Operating Channel Temperature

Mounting Temperature

(30 Seconds)

TSTG Storage Temperature

Value

-8V to 0V

1 mA

20 dBm

0.1 W

200 °C

320 °C

-65 to 150 °C

Notes

1/ 2/

1/ 2/

1/ 2/

1/ 2/

3/

1/ These ratings represent the maximum operable values for this device

2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD

3/ Junction operating temperature will directly affect the device median time to failure

(Tm). For maximum life, it is recommended that junction temperatures be

maintained at the lowest possible levels.

TABLE II

RF CHARACTERIZATION TABLE

(TA = 25°C, Nominal)

(VC = -5V)

Parameter

Insertion Loss

Peak Amplitude Error

RMS Amplitude Error

Peak Phase Shift Error

RMS Phase Shift Error

Input Return Loss

Output Return Loss

Test

Conditions

8.5 – 11GHz

8.5 – 11GHz

8.5 – 11GHz

8.5 – 11GHz

8.5 – 11GHz

8.5 – 11GHz

8.5 – 11GHz

Typ Units Notes

5

dB

0.5 dB

0.2 dB

3

deg

2

deg

15 dB

12 dB

Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured

m ea surem en ts.

2

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