TGL41-36A-E3/96(2012) Просмотр технического описания (PDF) - Vishay Semiconductors
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TGL41-36A-E3/96 Datasheet PDF : 5 Pages
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www.vishay.com
TGL41-6.8A thru TGL41-200A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
TGL41-6.8 TGL91A
1
TGL41-100 TGL200A
0.1
0.1 µs
1.0 µs 10 µs 100 µs 1.0 ms
td - Pulse Width
Fig. 1 - Peak Pulse Power Rating Curve
10 ms
10 000
1000
Measured at
Zero Bias
Measured at Stand-Off
100 Voltage VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
10
Uni-Directional
100
1000
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temerature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
1.00
0.75
0.50
0.25
0
0 25 50 75 100 125 150 175 200
TL - Lead Temerature (°C)
Fig. 5 - Power Derating Curve
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
Peak Value
is defined as the Point
IPPM
where the Peak Current
100
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
50
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
40
30
20
10
0
1
10
100
Number of Cycles at 60 Hz
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Only
Revision: 11-Dec-12
3
Document Number: 88403
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