TGA4522 Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGA4522

33 – 47 GHz Wide Band Driver Amplifier

TriQuint Semiconductor 

TGA4522

TABLE III

THERMAL INFORMATION

PARAMETER

TEST CONDITIONS

TCH

(OC)

RθJC Thermal Resistance

(channel to Case)

Vd = 6 V

Idq = 400 mA

Pdiss = 2.4 W

144

RθJC

(°C/W)

Tm

(HRS)

30.8

1.7E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier

at 70 oC baseplate temperature. Worst case condition with no RF applied, 100% of DC

power is dissipated.

Median Lifetime (Tm) vs. Channel Temperature

4

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