TGA4521 Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGA4521 Datasheet PDF : 9 Pages
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TGA4521
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
PARAMETER
FREQUENCY (GHz) MIN TYPICAL UNITS
Frequency Range
32 - 45 GHz
Drain Voltage, Vd
6.0
V
Drain Current, Id
175
mA
Gate Voltage, Vg
-0.7
V
32
14.5
20
Small Signal Gain, S21
36 - 38
15.5
17
dB
44
14
17
32
1
1.5
Input Return Loss, S11
36
3.5
8
dB
38
2.5
5
44
2
3
Output Return Loss, S22
32 - 38
44
8
10
dB
4
10
Output Power @ 1dB Gain Compression,
P1dB
38
32 - 45
24
24.5
dBm
23.5
Saturated Power, Psat
25
dBm
OTOI @ Pin = 1dBm
38
32 - 45
31
33
dBm
33
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
TCH
(OC)
RθJC Thermal Resistance
(channel to Case)
Vd = 6 V
Id = 175 mA
Pdiss = 1.05 W
144
RθJC
(°C/W)
70
TM
(HRS)
2.0E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70 oC baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
June 2008 © Rev
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