TGA4517 Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGA4517

Ka-Band Power Amplifier

TriQuint Semiconductor 

TGA4517

TABLE I

ABSOLUTE MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Vd

Vg

Id

⏐Ig⏐

PIN

PD

TCH

TSTG

Drain Voltage

Gate Voltage Range

Drain Current (Under RF Drive)

Gate Current

Input Continuous Wave Power

Power Dissipation

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

6.5 V

2/

-3 TO 0 V

4A

2/ 3/

141 mA

3/

TBD

26 W

2/ 4/

200 °C

5/ 6/

320 °C

-65 to 150 °C

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.

3/ Total current for the entire MMIC.

4/ When operated at this bias condition (with RF applied) at a base plate temperature of 70 °C, the

median life is 3.5E+4 hrs.

5/ Junction operating temperature will directly affect the device median time to failure (Tm). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

6/ These ratings apply to each individual FET.

TABLE II

DC PROBE TESTS

(Ta = 25 °C, Nominal)

SYMBOL

PARAMETER

VBVGD,Q1-Q2

Breakdown Voltage Gate-Drain

VBVGD,Q15-Q30 Breakdown Voltage Gate-Drain

VP,Q15-Q30

Pinch-Off Voltage

Each FET Cell is 750um

MIN.

-30

-30

-1.5

TYP.

-14

-14

-1

MAX.

-11

-11

-0.5

UNITS

V

V

V

2

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

May 2009 © Rev -

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