TGA4505 Просмотр технического описания (PDF) - TriQuint Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

TGA4505

4 Watt Ka Band HPA

TriQuint Semiconductor 

TGA4505

TABLE IV

THERMAL INFORMATION

Parameter

θJC Thermal Resistance

(channel to backside of

carrier)

Test Conditions

Vd = 6V

ID = 2.05 A

Pdiss = 12.3 W

TCH

(°C)

128

θJC

Tm

(°C/W) (HRS)

4.7 7.4E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 70 °C baseplate temperature. Worst case is at saturated output power

when DC power consumption rises to 23 W with 4 W RF power delivered to load.

Power dissipated is 19 W and the temperature rise in the channel is 88 °C.

Median Lifetime (Tm) vs. Channel Temperature

4

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

May 2009 © Rev -

Share Link: