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TGA4501-EPU Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGA4501-EPU
TriQuint
TriQuint Semiconductor TriQuint
TGA4501-EPU Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Advanced Product Information
December 14, 2001
TGA4501-EPU
TABLE I
MAXIMUM RATINGS
Symbol
V+
V-
I+
| IG |
PIN
PD
TCH
TM
TSTG
Parameter 5/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
8V
-5V TO 0V
3.0 A
62 mA
24 dBm
18.4 W
150 0C
320 0C
-65 to 150 0C
Notes
4/
4/
3/ 4/
1/ 2/
1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (TM).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median
life is reduced from 7.4 E+6 to 4.6 E+5 hours.
4/ Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
5/ These ratings represent the maximum operable values for this device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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