TGA2513 Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGA2513

Wideband LNA

TriQuint Semiconductor 

TGA2513

TABLE I

MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

Vd Positive Supply Voltage

Vg1 Gate 1 Supply Voltage Range

VALUE

5V

-1V to 0 V

NOTES

2/

Vg2 Gate 2 Supply Voltage Range

Id Positive Supply Current

| IG | Gate Supply Current

PIN Input Continuous Wave Power

PD Power Dissipation

TCH Operating Channel Temperature

Mounting Temperature (30 Seconds)

TSTG Storage Temperature

(Vd – 3) to (Vd – 2) V

151 mA

10 mA

21 dBm

0.76 W

200 °C

320 °C

-65 to 150 °C

2/

2/

2/, 3/

4/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed

PD.

3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is

1 E+7 hours.

4/ Junction operating temperature will directly affect the device median time to failure (Tm). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

SYMBOL

Idss, Q1- Q10

Vp, Q1-Q10

VBVGD, Q1-Q10

VBVGS, Q1-Q10

TABLE II

DC PROBE TEST

(TA = 25 °C, Nominal)

PARAMETER

MINIMUM

Saturated Drain Current

--

Pinch-off Voltage

-1

Breakdown Voltage Gate-

-30

Drain

Breakdown Voltage Gate-

-30

Source

Note: Q1-Q10 is a 720um size FET.

MAXIMUM

216

0

-7

-5

UNIT

mA

V

V

V

2

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

May 2009 © Rev -

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