TGA1081 Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGA1081 Datasheet PDF : 4 Pages
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Product Data Sheet
TGA1081
MAXIMUM RATINGS
Symbol
V+
I+
I-
PD
PIN
TCH
TM
TSTG
Parameter 4/
Positive Supply Voltage
Positive Supply Current
Negative Gate Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
420 mA
17.6 mA
3.36 W
20 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction
temperatures be maintained at the lowest possible levels.
3/ Total current for the entire MMIC
4/ These values represent maximum operable values for the device
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
Idss
VP
BVGS
BVGD
Parameter
Saturated Drain Current
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
30
-1.5
-30
-30
Maximum
141
-0.5
-8
-8
Value
mA
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Vd = 5 V
Symbol Parameter
Test Condition
Limit
Units
Min Typ Max
Gain Small Signal F = 25 GHz
20 21 --- dB
Gain
F = 26 GHz
22 24 ---
F = 27 GHz
23 25 ---
F = 27.5 – 28.5 GHz 24 24 ---
F = 29 GHz
23 24 ---
IRL
Input Return F = 25 – 29 GHz
--- -5 --- dB
Loss
ORL Output Return F = 25 – 29 GHz
--- -5 --- dB
Loss
PWR Output Power F = 25 GHz
18 21 --- dBm
.
@ P1dB
F = 26 GHz
21 22 ---
F = 27 – 29 GHz
21.5 23 ---
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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