TGA1071 Просмотр технического описания (PDF) - TriQuint Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
TGA1071 Datasheet PDF : 5 Pages
| |||
Advance Product Information
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
Symbol
V+
I+
PD
PIN
TCH
TM
TSTG
Parameter
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
7V
.4 A
2.8 W
20 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for both stages
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
Idss
VP1-5
BVGS1
BVGD1-5
Parameter
Saturated Drain Current (info
only)
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum Maximum Value
140
658
mA
-1.5
-0.5
V
-30
-8
V
-30
-8
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol Parameter
Gp
Small-signal
Power Gain
Test Condition
Vd=5V, Id=120mA
F = 36 to 40 GHz
F = 38 GHz
Limit
Min Nom Max
15
13
IRL Input Return F = 36 to 40 GHz - -10 -
Loss
ORL Output Return F = 36 to 40 GHz - -10 -
Loss
PWR Output Power F = 36 to 40 GHz
22 -
Units
dB
dB
dB
dB
dB
dBm
Note: RF probe data is taken at 0.4 GHz steps
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
2
Share Link: 