TCET1110 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
TCET1110 Datasheet PDF : 9 Pages
| |||
VISHAY
TCET111.(G)
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Emitter
Parameter
Forward voltage
Junction capacitance
Test condition
IF = ± 50 mA
VR = 0 V, f = 1 MHz
Symbol
VF
Cj
Typ.
Max
Unit
1.25
1.6
V
50
pF
Detector
Parameter
Collector emitter voltage
Emitter collector voltage
Collector emitter cut-off current
Test condition
IC = 1 mA
IE = 100 µA
VCE = 20 V, If = 0, E = 0
Symbol Min
Typ.
Max
Unit
VCEO
70
V
VECO
7
V
ICEO
10
100
nA
Coupler
Parameter
Collector emitter saturation
voltage
Cut-off frequency
Coupling capacitance
Test condition
IF = 10 mA, IC = 1 mA
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
f = 1 MHz
Symbol
VCEsat
fc
Ck
Typ.
Max
Unit
0.3
V
110
kHz
0.3
pF
Current Transfer Ratio
Parameter
IC/IF
Test condition
VCE = 5 V, IF = 1 mA
VCE = 5 V, IF = 1 mA
VCE = 5 V, IF = 1 mA
VCE = 5 V, IF = 1 mA
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 10 mA
VCE = 5 V, IF = 10 mA
VCE = 5 V, IF = 10 mA
VCE = 5 V, IF = 10 mA
Part
Symbol Min
Typ.
Max
Unit
TCET1111 (G) CTR
0.13
0.30
%
TCET1112 (G) CTR
0.22
0.45
%
TCET1113 (G) CTR
0.34
0.70
%
TCET1114 (G) CTR
0.56
0.90
%
TCET1110 (G) CTR 0.50
6.0
%
TCET1115 (G) CTR
0.5
1.5
%
TCET1116 (G) CTR
1.0
3.0
%
TCET1117 (G) CTR
0.8
1.6
%
TCET1118 (G) CTR
1.3
2.6
%
TCET1119 (G) CTR
2.0
4.0
%
TCET1111 (G) CTR 0.40
0.8
%
TCET1112 (G) CTR 0.63
1.25
%
TCET1113 (G) CTR
1.0
2.0
%
TCET1114 (G) CTR
1.6
3.2
%
Document Number 83546
Rev. A3, 18-Mar-03
www.vishay.com
3
Share Link: 