TCDT1120 Просмотр технического описания (PDF) - Vishay Semiconductors
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TCDT1120 Datasheet PDF : 10 Pages
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TCDT1120/ TCDT1120G
Vishay Semiconductors
100
IF=50mA
20mA
10
10mA
5mA
1
2mA
0.1
0.1
95 11041
1mA
CNY75A
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 9. Collector Current vs. Collector Emitter Voltage
1.0
CTR=50%
0.8
CNY75A
0.6
0.4
20%
0.2
0
1
95 11034
10%
10
100
IC – Collector Current ( mA )
Figure 10. Collector Emitter Saturation Voltage vs. Collector
Current
1000
TCDT1122(G)
VCE=5V
100
10
1
0.1
14796
1
10
100
IF – Forward Current ( mA )
Figure 11. Current Transfer Ratio vs. Forward Current
1000
TCDT1123(G)
VCE=5V
100
10
1
0.1
14797
1
10
100
IF – Forward Current ( mA )
Figure 12. Current Transfer Ratio vs. Forward Current
1000
TCDT1124(G)
VCE=5V
100
10
1
0.1
14798
1
10
100
IF – Forward Current ( mA )
Figure 13. Current Transfer Ratio vs. Forward Current
50
TCDT1122(G)
40 Saturated Operation
VS=5V
RL=1k Ω
30
toff
20
10
0
0
14799
ton
5
10
15
20
IF – Forward Current ( mA )
Figure 14. Turn on / off Time vs. Forward Current
www.vishay.com
6
Document Number 83532
Rev. 1.6, 26-Oct-04
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