TC58NVG1S3BFT00 Просмотр технического описания (PDF) - Toshiba
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TC58NVG1S3BFT00 Datasheet PDF : 37 Pages
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TC58NVG1S3BFT00/TC58NVG1S8BFT00
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70℃, VCC = 2.7 V to 3.6 V)
SYMBOL
PARAMETER
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
tWW
tRR
tRW
tRP
tRC
tREA
tCEA
tCLEA
tALEA
tOH
tRHZ
tCHZ
tREH
tIR
tRHW
tWHC
tWHR
tR
tWB
tRST
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
WP High to WE Low
Ready to RE Falling Edge
Ready to WE Falling Edge
Read Pulse Width
Read Cycle Time
RE Access Time
CE Access Time
CLE Access Time
ALE Access Time
Data Output Hold Time
RE High to Output High Impedance
CE High to Output High Impedance
RE High Hold Time
Output-High-impedance-to- RE Falling Edge
RE High to WE Low
WE High to CE Low
WE High to RE Low
Memory Cell Array to Starting Address
WE High to Busy
Device Reset Time (Ready/Read/Program/Erase)
MIN
MAX
UNIT
0
ns
10
ns
0
ns
10
ns
25
ns
0
ns
10
ns
20
ns
10
ns
50
ns
15
ns
100
ns
20
ns
20
ns
35
ns
50
ns
35
ns
45
ns
45
ns
45
ns
10
ns
30
ns
20
ns
15
ns
0
ns
30
ns
30
ns
30
ns
25
µs
200
ns
6/6/10/500
µs
NOTES
5
2003-10-30A
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