TA8216H Просмотр технического описания (PDF) - Toshiba
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TA8216H Datasheet PDF : 11 Pages
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TA8216H
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
Output current (Peak/ch)
Power dissipation
Operation temperature
Storage temperature
VCC
40
V
IO (peak)
3.0
A
PD (Note)
25
W
Topr
-20~75
°C
Tstg
-55~150
°C
Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.
Electrical Characteristics
(unless otherwise specified VCC = 28 V, RL = 8 9, Rg = 600 9, f = 1 kHz, Ta = 25°C)
Characteristics
Quiescent current
Output power
Total harmonic distortion
Voltage gain
Input resistance
Ripple rejection ratio
Output noise voltage
Cross talk
Muting threshold voltege
Symbol
ICCQ
Pout (1)
Pout (2)
Pout (3)
THD
GV
RIN
R.R.
Vno
C.T.
Vth 11
Test
Circuit
Test Condition
¾ Vin = 0
¾ THD = 10%
¾ THD = 1%
¾
THD = 10%, VCC = 24 V,
RL = 4 W
¾ Pout = 2 W
¾ Vout = 0.775 Vrms (0dBm)
¾
¾
¾
Rg = 0, fripple = 100 Hz
Vripple = 0.775 Vrms (0dBm)
¾
Rg = 10 kW,
BW = 20 Hz~20 kHz
¾
Rg = 10 kW,
Vout = 0.775 Vrms (0dBm)
¾
¾
Min Typ. Max Unit
¾
50
105
mA
10
13
¾
¾
10
¾
W
¾
13
¾
¾ 0.04 0.2
%
32.5 34.0 35.5 dB
¾
30
¾
kW
-40 -50
¾
dB
¾ 0.14 0.3 mVrms
¾
-70
¾
dB
2.6
2.8
¾
V
Typ. DC Voltage of Each Terminal (VCC = 28 V, Ta = 25°C)
Terminal No.
DC voltage (V)
1
2
3
4
5
1.6 20m GND 20m 1.6
6
7
8
9
10
11
12
9.4
13.0
5.0
VCC GND
2.8
13.0
5
2002-02-13
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