T110HF120 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

Список матч

T110HF120

Power Rectifier Diodes (T-Modules), 40 A to 110 A

Vishay Semiconductors 

T40HF..., T70HF..., T85HF..., T110HF... Series

Vishay Semiconductors

Power Rectifier Diodes

(T-Modules), 40 A to 110 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE

NUMBER

VOLTAGE

CODE

10

20

T40HF...

40

T70HF...

T85HF...

60

T110HF...

80

100

120

VRRM, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

V

100

200

400

600

800

1000

1200

VRSM, MAXIMUM NON-REPETITIVE

PEAK REVERSE VOLTAGE

V

150

300

500

700

900

1100

1300

IRRM MAXIMUM

AT TJ = 25 °C

μA

100

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

T40HF T70HF T85HF T110HF UNITS

Maximum average forward current

at case temperature

IF(AV)

180° conduction, half sine wave

40

70

85

110

A

85

85

85

85

°C

Maximum RMS forward current

Maximum peak, one-cycle

forward, non-repetitive

surge current

Maximum I2t for fusing

IF(RMS)

IFSM

I2t

t = 10 ms No voltage

t = 8.3 ms reapplied

t = 10 ms 100 % VRRM

t = 8.3 ms reapplied

t = 10 ms No voltage

t = 8.3 ms reapplied

t = 10 ms 100 % VRRM

t = 8.3 ms reapplied

Sinusoidal

half wave,

initial TJ =

TJ maximum

63 110 134

173

A

570 1200 1700 2000

600 1250 1800 2100

A

480 1000 1450 1700

500 1050 1500 1780

1630 7100 14 500 20 500

1500 6450 13 500 18 600

A2s

1150 5000 10 500 14 500

1050 4570 9600 13 200

Maximum I2√t for fusing

Low level value of

threshold voltage

High level value of

threshold voltage

Low level value of

forward slope resistance

High level value of

forward slope resistance

Maximum forward voltage drop

I2√t

VF(TO)1

VF(TO)2

rf1

rf2

VFM

t = 0.1 ms to 10 ms, no voltage reapplied

(16.7 % x π x IF(AV) < I < π x IF(AV)),

TJ maximum

(I > π x IF(AV)), TJ maximum

16 300 70 700 148 700 204 300 A2√s

0.66 0.76 0.68 0.68

V

0.84 0.95 0.90 0.86

(16.7 % x π x IF(AV) < I < π x IF(AV)),

TJ maximum

(I > π x IF(AV)), TJ maximum

4.3 2.4 1.76 1.56

mΩ

3.1 1.7 1.08 1.12

IFM = π x IF(AV), TJ = 25 °C,

tp = 400 μs square pulse

1.30 1.35 1.27 1.35

V

Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2

www.vishay.com

2

For technical questions within your region, please contact one of the following: Document Number: 93587

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 20-May-10

Share Link: