T431616B Просмотр технического описания (PDF) - Taiwan Memory Technology

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T431616B

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

BLOCK DIAGRAM

T431616B

Bank Select

Data Input Register

512K x 16

CLK

ADD

512K x 16

Column Decoder

LCKE

Latency & Burst Length

LRAS LCBR L W E

LCAS

Timing Register

Programming Register

LWCBR

LDQM

CLK

CKE

CS

RAS

CAS

WE L(U)DQM

LWE

LDQM

DQi

Taiwan Memory Technology, Inc. reserves the right P. 3

to change products or specifications without notice.

Publication Date: JUL. 2001

Revision:A

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