T110HF200 Просмотр технического описания (PDF) - Vishay Semiconductors
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T110HF200 Datasheet PDF : 11 Pages
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Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
T..HF Series
Vishay High Power Products
100
180°
90
120°
80
90°
60°
70
30°
60
RMSLimit
50
1 K/ W
1.5 K/ W
2 K/ W
40
3 K/ W
30
Conduc tion Angle
5 K/ W
20
T85HF.. Series
10
TJ= 150°C
7 K/ W
0
0 10 20 30 40 50 60 70 80 900 25 50 75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 15 - Forward Power Loss Characteristics
140
DC
120 180°
120°
90°
100
60°
30°
80
60 RMSLimit
40
20
Conduc tion Period
T85HF.. Series
TJ = 150°C
0.5K/ W
0.7K/ W
1K/ W
1.5K/ W
2K/ W
3K/ W
5K/ W
0
0 20 40 60 80 100 120 1400 25 50 75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - Forward Power Loss Characteristics
1600
1400
1200
At Any Ra ted Loa d Cond ition And With
Ra ted VRRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
800
600
T85HF.. Series
400
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 17 - Maximum Non-Repetitive Surge Current
1800
1600
1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
1200
1000
800
600 T85HF.. Series
400
0.01
0.1
1
Pulse Train Duration (s)
Fig. 18 - Maximum Non-Repetitive Surge Current
Document Number: 93587
Revision: 12-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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