T16T Просмотр технического описания (PDF) - STMicroelectronics
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T16T Datasheet PDF : 9 Pages
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Characteristics
T16T
1
Characteristics
Table 2.
Symbol
Absolute maximum ratings (limiting values; Tj = 25 °C, unless otherwise specified)
Parameter
Value
Unit
IT(RMS) On-state rms current (full sine wave)
ITSM
I²t
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
I²t Value for fusing
dI/dt
VDSM /
VRSM
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current IG = 2 x IGT
tr ≤ 100 ns
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 60 Hz
tp = 10 ms
tp = 20 µs
Tc = 86 °C
16
A
tp = 20 ms
120
A
tp = 16.7 ms
126
105
A²s
Tj = 125 °C
50
A/µs
Tj = 25 °C
VDRM/VRRM
+ 100
V
Tj = 125 °C
4
A
Tj = 125 °C
1
W
- 40 to + 150 °C
- 40 to + 125 °C
2/9
Doc ID 16488 Rev 2
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