STTH802B Просмотр технического описания (PDF) - STMicroelectronics
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STTH802B Datasheet PDF : 11 Pages
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Characteristics
Figure 5.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220FPAC
0.1
STTH802
Figure 6.
Junction capacitanceversus
reverse applied voltage (typical
values)
C(pF)
100
F=1MHz
Vosc=30mVRMS
Tj=25°C
0.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
1.E+01
10
1
VR(V)
10
100
1000
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
160
IF=8A
140
VR=160V
120
100
Tj=125°C
80
60
40
20
0
10
Tj=25°C
100
dIF/dt(A/µs)
1000
Figure 8. Reverse recovery time versus dIF/dt
(typical values)
tRR(ns)
80
70
60
50
40
30
20
10
0
10
IF=8A
VR=160V
Tj=125°C
Tj=25°C
100
dIF/dt(A/µs)
1000
Figure 9. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
12
IF=8A
VR=160V
10
8
6
Tj=125°C
4
2
Tj=25°C
dIF/dt(A/µs)
0
10
100
1000
Figure 10. Dynamic parameters versus
junction temperature
QRR; IRM [Tj] / QRR; IRM [Tj=125°C]
1.4
IF=8A
1.2
VR=160V
1.0
0.8
IRM
0.6
QRR
0.4
0.2
Tj(°C)
0.0
25
50
75
100
125
150
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