STTH1003S Просмотр технического описания (PDF) - STMicroelectronics
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STTH1003S Datasheet PDF : 7 Pages
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STTH1003S
Figure 3: Reverse recovery time versus dIF/dt
(90% confidence)
Figure 4: Softness factor versus dIF/dt (typical
values)
trr(ns)
100
90
VR=200V
Tj=125°C
80
70
IF = 2xIF(AV)
60
IF = IF(AV)
50
40
30
IF = 0.5xIF(AV)
20
10
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
S factor
0.60
0.50
VR=200V
Tj=125°C
0.40
0.30
0.20
0.10
0.00
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 5: Relative variations of dynamic
parameters versus junction temperature
(reference: Tj = 125°C)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
S factor
IRM
Tj(°C)
50
75
100
125
Figure 6: Transient peak forward voltage
versus dIF/dt (90% confidence)
VFP(V)
8
IF=IF(AV)
7
Tj=125°C
6
5
4
3
2
1
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 7: Forward recovery time versus dIF/dt
(90% confidence)
tfr(ns)
300
250
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
200
150
100
50
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
3/8
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