STTH6010 Просмотр технического описания (PDF) - STMicroelectronics

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STTH6010

Ultrafast recovery - high voltage diode

STMicroelectronics 

Characteristics

STTH6010

Figure 5.

trr(ns)

700

600

500

Reverse recovery time versus

dIF/dt (typical values)

IF= 2 x IF(AV)

VR=600V

Tj=125°C

400

300

IF= IF(AV)

200

100

0

0

dIF/dt(A/µs)

IF=0.5 x IF(AV)

50 100 150 200 250 300 350 400 450 500

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Qrr(µC)

10

9

VR=600V

Tj=125°C

8

IF= 2 x IF(AV)

7

IF= IF(AV)

6

5

4

IF=0.5 x IF(AV)

3

2

1

dIF/dt(A/µs)

0

0

50 100 150 200 250 300 350 400 450 500

Figure 7. Softness factor versus

dIF/dt (typical values)

S factor

1.50

1.25

IF = 2 x IF(AV)

VR=600V

Tj=125°C

1.00

0.75

0.50

0

dIF/dt(A/µs)

50 100 150 200 250 300 350 400 450 500

Figure 8.

Relative variations of dynamic

parameters versus junction

temperature

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

25

Sfactor

IF = IF(AV)

VR=600V

Reference: Tj=125°C

IRM

tRR

QRR

Tj(°C)

50

75

100

125

4/8

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